Comparison of High Power IGBT, IGCT and ETO for Pulse Applications
نویسندگان
چکیده
This paper focuses on the comparison of the state-ofthe-art high power devices. A behavioral power loss model is developed to conduct electro-thermal simulation of these devices. The junction temperature is observed through simulation. The high power devices are compared for pulse application based on losses and thermal handling capability. Moreover, device operation condition (current, voltage and frequency) can be optimized to maximize the utilization of the power switch.
منابع مشابه
Power Loss Research on IGCT - applied NPC Three - level Converter
IGCT has a broad application prospects in high power conversion such as flexible DC transmission due to its characteristics of high voltage and large capacity. Compared with IGBT it has a voltage and current level of 4.5kV/4kA and its slope resistance is less than IGBT’s. In addition, due to the di/dt snubber circuit, IGCT’s opening loss will be reduced. Because of improvement of IGCT performan...
متن کاملNew 5.2 kV Extra Fast Recovery Diode for IGBT and IGCT Applications
A new class of high power extra fast recovery diode, optimised for IGBT and IGCT applications is presented. These diodes incorporate a novel p-emitter structure and lifetime control to offer real improvements in dynamic performance, combined with improved safe operating area and high reliability. Test data is presented, along with projections for a range of commercial products in industry stand...
متن کاملHybrid Multilevel Power Conversion System: A Competitive Solution for High-Power Applications
Use of multilevel inverters has become popular in recent years for high-power applications. Various topologies and modulation strategies have been investigated for utility and drive applications in the literature. Trends in power semiconductor technology indicate a tradeoff in the selection of power devices in terms of switching frequency and voltage-sustaining capability. New power converter t...
متن کاملTemperature Effects on IGCT Performance
The Integrated Gate-Commutated Thyristor (IGCT) is an advanced semiconductor device for high frequency, high power applications. This work presents a detailed discussion of experimental dynamic characteristics of IGCTs at ambient temperatures ranging from –40°C to 50°C. A lumpedcharge physics-based IGCT model with full temperature response is also developed in this work. A chopper circuit with ...
متن کاملDevelopment of 60 kV, 300 A, 3 kHz Pulsed Power Modulator for Wide Applications
In this paper, a novel pulsed power generator based on IGBT stacks is proposed for wide pulsed power applications. Because it can generate high voltage pulsed output without any step-up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation, high repetition rate and rectangular pulse shapes. Proposed scheme consists of multiple power stage...
متن کامل